SMALL-SIGNAL FIELD EFFECT IN HETEROEPITAXIAL SILICON-ON-SAPPHIRE LAYERS PRODUCED BY MOLECULAR-BEAM EPITAXY |
| 4 | |
| 2009 |
| scientific article | 621.382 | ||
| 39-44 | heterostructures, silicon on sapphire, field effect, small-signal measurement technique |
| Small-signal measurement technique to study field-effect mobility has been shown to have high informativity in relation to thin silicon-on-sapphire layers produced by molecular beam epitaxy. This technique allows determining the state of the Si surface and Si|/Al2O3 interface in Si layers with the thickness below 0.3 µm. The values of charge carrier drift mobility and trapping center parameters on these surfaces have also been determined. |
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